Surface Charge Transfer Doping: Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices (Adv. Mater. 47/2016)

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• 作者：Xiujuan Zhang ; Zhibin Shao ; Xiaohong Zhang ; Yuanyuan He and Jiansheng Jie
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：December 21, 2016
• 年：2016
• 卷：28
• 期：47
• 页码：10575
• 全文大小：44859K
• ISSN：1521-4095

文摘

Surface charge transfer doping (SCTD) is emerging as a simple yet efficient technique to achieve reliable doping in a nondestructive manner. The high reproducibility as well as high spatial selectivity makes SCTD a promising technique to construct high-performance nanodevices based on the low-dimensional nanostructures. On page 10409, X. H. Zhang, J. S. Jie, and co-workers review the recent advances in SCTD of low-dimensional semiconductor nanostructures and their electronic and optoelectronic applications.