Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers

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• 作者：Lei Pan ; Xun Dong ; Jinyu Ni ; Zhonghui Li ; Qiankun Yang ; Daqing Peng and Chuanhao Li
• 刊名：physica status solidi (c)
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：13
• 期：5-6
• 页码：181-185
• 全文大小：713K
• ISSN：1610-1642a

文摘

In this paper, crack-free GaN films with step-graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal-organic chemical vapor deposition(MOCVD). The combination of both buffers effectively improves the properties of GaN layer. With the optimization of the buffer structures, high quality compressively-strained GaN layers with thickness up to 3.6 μm have been obtained on Si(111) substrates (