Resonance Raman of oxygen dangling bonds in amorphous silicon dioxide

详细信息    查看全文

• 作者：D. Di Francesca ; A. Boukenter ; S. Agnello ; A. Alessi ; S. Girard ; M. Cannas and Y. Ouerdane
• 刊名：Journal of Raman Spectroscopy
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：48
• 期：2
• 页码：230-234
• 全文大小：354K
• ISSN：1097-4555

文摘

We investigate the origin of a resonance Raman band induced by ionizing radiation in amorphous silicon dioxide (silica glass), which can be detected under ultraviolet laser excitation. A silica sample, rich of oxygen-excess related defects, was prepared by treating some length of a pure-silica-core multimode fiber in an O₂ atmosphere (at high temperature and pressure) and by irradiating it with X-rays at 10 MGy(SiO₂) dose. A micro-Raman study revealed a gaussian band peaking at 896 cm⁻¹ with a full width at half maximum of 32 cm⁻¹, which could be detected by exciting the sample with the 325-nm line of a HeCd laser. This spectral feature is absent in the Raman spectra performed with the 442-nm line of the same laser. On the basis of several experimental evidences and some complementary literature data, the 896 cm⁻¹ band is assigned to a resonance Raman scattering of oxygen dangling bonds, often called non-bridging oxygen hole centers. Copyright