23.2% laser processed back contact solar cell: fabrication, characterization and modeling

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• 作者：Morris Dahlinger ; Kai Carstens ; Erik Hoffmann ; Renate Zapf-Gottwick and Jü ; rgen H. Werner
• 刊名：Progress in Photovoltaics: Research and Applications
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：25
• 期：2
• 页码：192-200
• 全文大小：1187K
• ISSN：1099-159X

文摘

We describe the manufacturing process for interdigitated back contact back junction silicon solar cells based on laser processes, and present detailed results and analysis to our best cell efficiency of 23.24%. The manufacturing process features two laser doping steps, one for the boron doped emitter and one for the phosphorus doped back surface field. The saturation current densities of thermal oxide passivated laser doped regions are on par with furnace diffused silicon for high efficiency solar cells. Laser ablation locally defines the contact areas through the rear dielectric layer stack, and structures the rear aluminum metallization. The precision of the laser systems in conjunction with the optical setup yields line shaped doping traces with a width of 150 µm and a pitch below 500 µm. The measured optical and electrical properties of our solar cell agree well with 3D simulation results. The measured reflection, transmission, quantum efficiency and current voltage curves in dark and illuminated condition simultaneously agree well with simulation, based on the same data set, giving confidence in the result of a detailed free energy loss analysis. The bulk resistive and recombination losses are identified as the main loss contributors. Copyright