Li-Ion Synaptic Transistor for Low Power Analog Computing

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• 作者：Elliot J. Fuller ; Farid El Gabaly ; Franç ; ois Lé ; onard ; Sapan Agarwal ; Steven J. Plimpton ; Robin B. Jacobs-Gedrim ; Conrad D. James ; Matthew J. Marinella and A. Alec Talin
• 刊名：Advanced Materials
• 出版年：2017
• 出版时间：January 25, 2017
• 年：2017
• 卷：29
• 期：4
• 全文大小：1459K
• ISSN：1521-4095

文摘

Nonvolatile redox transistors (NVRTs) based upon Li-ion battery materials are demonstrated as memory elements for neuromorphic computer architectures with multi-level analog states, “write” linearity, low-voltage switching, and low power dissipation. Simulations of backpropagation using the device properties reach ideal classification accuracy. Physics-based simulations predict energy costs per “write” operation of <10 aJ when scaled to 200 nm × 200 nm.