Scalable modeling with simple topology for stacked millimeter-wave transformers

详细信息    查看全文

• 作者：Diqun Lu ; Wenjuan Zhang and Fujiang Lin
• 关键词：transformers modeling ; scalable equivalent circuit ; electromagnetic (EM) simulation
• 刊名：International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
• 出版年：2016
• 出版时间：May/June 2016
• 年：2016
• 卷：29
• 期：3
• 页码：437-445
• 全文大小：2459K
• ISSN：1099-1204

文摘

Scalable modeling with very simple topology for stacked millimeter-wave transformers is presented. Because of high-frequency effect and thick metal effect, the architecture is based on single-π and double-π network for transformers with turn ratio 1:1 and 1:2, respectively. The model parameters are extracted from two factors—the layout and process data. Simple and accurate expressions for the self-inductance, mutual coupling inductance, and oxide capacitance are provided for the model. The proposed model is verified by 65 nm technology transformers. A very close agreement is shown for S-parameter, self-inductances of each coil, and coupling coefficient up to 110 GHz. Copyright