Single crystalline SnO₂ thin films grown on m -plane sapphire substrate by mist chemical vapor deposition

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• 作者：Zenji Yatabe ; Takaaki Tsuda ; Junya Matsushita ; Takehide Sato ; Tatsuya Otabe ; Koji Sue ; Shoji Nagaoka and Yusui Nakamura
• 刊名：physica status solidi (c)
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：14
• 期：1-2
• 全文大小：616K
• ISSN：1610-1642a

文摘

Tin dioxide (SnO₂) thin films, as a candidate for realizing next-generation electrical and optical devices, were grown on 2-inch diameter m -plane sapphire substrates by mist chemical vapour deposition at atmospheric pressure. The SnO₂ thin films were characterized by scanning electron microscope (SEM), atomic force microscope (AFM), X-ray diffraction (XRD) in θ–2θ and φ scanning modes, and electron backscatter diffraction (EBSD). Although the SEM and AFM images showed a relatively rough surface morphology, it was found from the XRD and EBSD measurements that SnO₂ films were epitaxially grown on the substrates under optimised growth condition. Epitaxial growth of SnO₂ thin film growth at three typical areas on the substrate was confirmed by the EBSD measurements. It is likely that the single crystalline SnO₂ (001) thin film was formed across the 2-inch sapphire substrate. Finally, the second SnO₂ layer was overgrown on the above single crystalline SnO₂ thin film, which functioned as a buffer layer. This method which drastically improved surface roughness of the second SnO₂ layer.