Microwave Absorption of SiC/HfCxN1−x/C Ceramic Nanocomposites with HfCxN1−x-Carbon Core-Shell Particles
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- 作者：Qingbo Wen ; Yao Feng ; Zhaoju Yu ; Dong-Liang Peng ; Norbert Nicoloso ; Emanuel Ionescu and Ralf Riedel
- 刊名：Journal of the American Ceramic Society
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：99
- 期：8
- 页码：2655-2663
- 全文大小：2044K
- ISSN：1551-2916
文摘
The dielectric properties of high-temperature stable single-source precursor-derived SiC/HfCxN1−x/C ceramic nanocomposites are determined by microwave absorption in the X-band (8.2–12.4 GHz) at room temperature. The samples synthesized at 1700°C, denoted as SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics, comprising ≈ 1.3 and ≈ 4.2 vol% HfCxN1−x, respectively, show enhanced microwave absorption capability superior to hafnium-free SiC/C-1700°C. The minimum reflection loss of SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C are −47 and −32 dB, and the effective absorption bandwidth amount to 3.1 and 3.6 GHz, respectively. Segregated carbon, including graphitic carbon homogeneously dispersed in the SiC matrix and less ordered carbon deposited as a thin film on HfCxN1−x nanoparticles, accounts for the unique dielectric behavior of the SiC/HfCxN1−x/C ceramics. Due to their large reflection loss and their high chemical and temperature stability, SiC/5HfCxN1−x/C-1700°C and SiC/15HfCxN1−x/C-1700°C ceramics are promising candidate materials for electromagnetic interference applications in harsh environment.