文摘
Air-stable doping of the n–type fullerene layer in an n–i–p planar heterojunction perovskite device is capable of enhancing device efficiency and improving device stability. Employing a (HC(NH2)2)0.83Cs0.17Pb(I0.6Br0.4)3 perovskite as the photoactive layer, glass–glass laminated devices are reported, which sustain 80% of their “post burn-in” efficiency over 3400 h under full sun illumination in ambient conditions.