High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics
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文摘
Low-bandgap CH3NH3(PbxSn1&ndash;x)I3 (0 &le; x &le; 1) hybrid perovskites (e.g., ≈1.5&ndash;1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm2 V−1 s−1) intrinsic carrier mobilities.

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