Stoichiometric Control of SiO_x Thin Films Grown by Reactive Magnetron Sputtering at Oblique Angles

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• 作者：Aurelio Garcia-Valenzuela ; Rafael Alvarez ; Carmen Lopez-Santos ; Francisco J. Ferrer ; Victor Rico ; Elena Guillen ; Mercedes Alcon-Camas ; Ramon Escobar-Galindo ; Agustin R. Gonzalez-Elipe and Alberto Palmero
• 刊名：Plasma Processes and Polymers
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：13
• 期：12
• 页码：1242-1248
• 全文大小：1310K
• ISSN：1612-8869

文摘

The deposition of SiO_x (rg/1998/Math/MathML">rg/1998/Math/MathML">x≤2) compound thin films by the reactive magnetron sputtering technique at oblique angles is studied from both theoretical and experimental points of view. A simple mathematical formula that links the film stoichiometry and the deposition conditions is deduced. Numerous experiments have been carried out to test this formula at different deposition pressures and oblique angle geometries obtaining a fairly good agreement in all studied conditions. It is found that, at low deposition pressures, the proportion of oxygen with respect to silicon in the film increases a factor of ∼5 when solely tilting the film substrate with respect to the target, whereas at high pressures the film stoichiometry depends very weakly on the tilt angle. This behavior is explained by considering the fundamental processes mediating the growth of the film by this technique.