Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure

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• 作者：Tribhuwan Pandey ; Avinash P. Nayak ; Jin Liu ; Samuel T. Moran ; Joon-Seok Kim ; Lain-Jong Li ; Jung-Fu Lin ; Deji Akinwande and Abhishek K. Singh
• 刊名：Small
• 出版年：2016
• 出版时间：August 10, 2016
• 年：2016
• 卷：12
• 期：30
• 页码：4063-4069
• 全文大小：2049K
• ISSN：1613-6829

文摘

A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS₂ heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa⁻¹ as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I_2D/I_G measurements.