Solution-processed high-k oxide dielectric via deep ultraviolet and rapid thermal annealing for high-performance MoS₂ FETs

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• 作者：Geonwook Yoo ; Sol Lea Choi ; Byungwook Yoo and Min Suk Oh
• 刊名：physica status solidi (a)
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：214
• 期：1
• 全文大小：1278K
• ISSN：1862-6319

文摘

So far most of MoS₂-based devices have been demonstrated on oxide gate dielectrics (e.g., SiO₂, Al₂O₃, HfO₂, etc) deposited by vacuum process or on polymer gate dielectrics. In this study, we report electrical characteristics of multilayer MoS₂ transistors fabricated on solution-processed high-k AlO_x gate dielectric via deep ultraviolet (DUV) activation in combination with rapid thermal annealing process at 250 °C. The solution-processed AlO_x sol–gel film exhibited low leakage current of about 1.49 μA cm⁻² at 1 MV cm⁻¹ and a relative dielectric constant (k) of ∼6.1 at 1 kHz. The fabricated MoS₂-FETs exhibit median field-effect mobility of ∼23.3 cm² V⁻¹s⁻¹, threshold voltage of ∼ 0.79 V, subthreshold slope of ∼0.30 V dec⁻¹, and on/off current ratio of ∼10⁷. The electrical performance can be further improved by optimizing the AlO_x sol–gel film as well as the device structure, and the result implies that the solution-processed high-k AlO_x is promising for TMDC–based device applications.