Growth, morphology, structure and characterization of l-histidinium dihydrogen arsenate orthoarsenic acid single crystal

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• 作者：Nidhi Tyagi ; Nidhi Sinha ; Harsh Yadav and Binay Kumar
• 关键词：Hirshfeld surface ; morphology ; dielectric properties ; piezoelectricity ; ferroelectric properties
• 刊名：Acta Crystallographica Section B
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：72
• 期：4
• 页码：593-601
• 全文大小：1790K
• ISSN：2052-5206

文摘

l-Histidinium dihydrogen arsenate orthoarsenic acid (LHAS) crystals were grown by the slow evaporation method. Single-crystal X-ray diffraction confirms monoclinic structure. The growth rates of various planes of LHAS crystals were estimated by morphological study. Hirshfeld surface and fingerprint plots were analyzed to investigate the intermolecular interactions at 0.002 a.u. present in the crystal structure. The functional groups and phase behavior of the compound are studied by FTIR spectroscopy and differential scanning calorimetry (DSC). A ferroelectric to paraelectric phase transition at 307 K was observed in dielectric studies. The piezoelectric charge coefficients of the grown crystal were found to be 2 pC/N. The values of coercive field (E_c), remnant polarization (P_r) and spontaneous polarization (P_s) in the hysteresis loop are found to be 5.236 kV cm⁻¹, 0.654 µC cm⁻² and 2.841 µC cm⁻², respectively. Piezoelectricity and ferroelectricity are reported for the first time in LHAS crystals. The mechanical strength was confirmed from microhardness study and void volume. Due to the low value of the dielectric constant, and good piezoelectric and ferroelectric properties, LHAS crystals can be used in microelectronics, sensors and advanced electronic devices.