Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices

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• 作者：Bo-Yun Kim ; Woong-Hee Lee ; Hyun-Gyu Hwang ; Dong-Ha Kim ; Jeong-Hun Kim ; Sang-Hoon Lee and Sahn Nahm
• 刊名：Advanced Functional Materials
• 出版年：2016
• 出版时间：August 2, 2016
• 年：2016
• 卷：26
• 期：29
• 页码：5211-5221
• 全文大小：3344K
• ISSN：1616-3028

文摘

Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na_0.5K_0.5)NbO₃ (NKN) films that are grown at 300 °C on TiN/SiO₂/Si and flexible TiN/Polyimide (TiN-PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen-vacancy filaments. They have good ReRAM properties such as a large ratio of R_HRS to R_LRS as well as high reliability. The NKN film grown on flexible TiN-PI substrate exhibits a high piezoelectric strain constant of 50 pm V⁻¹. The NKN NG has a large open-circuit output voltage of 2.0 V and a short-circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 10² are obtained from NKN ReRAM driven by NKN NG.