文摘
A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa−1 as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D/IG measurements.