Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe₂/MoS₂ Heterostructure for Ambipolar Field-Effect Transistors

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• 作者：Inyeal Lee ; Servin Rathi ; Dongsuk Lim ; Lijun Li ; Jinwoo Park ; Yoontae Lee ; Kyung Soo Yi ; Krishna P. Dhakal ; Jeongyong Kim ; Changgu Lee ; Gwan-Hyoung Lee ; Young Duck Kim ; James Hone ; Sun Jin Yun ; Doo-Hyeb Youn and Gil-Ho Kim
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：November 16, 2016
• 年：2016
• 卷：28
• 期：43
• 页码：9519-9525
• 全文大小：2199K
• ISSN：1521-4095

文摘

An ambipolar dual-channel field-effect transistor (FET) with a WSe₂/MoS₂ heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS₂ and WSe₂, respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe₂/MoS₂ dual-channel FET.