Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films
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- 作者：Sahar Saremi ; Ruijuan Xu ; Liv R. Dedon ; Julia A. Mundy ; Shang-Lin Hsu ; Zuhuang Chen ; Anoop R. Damodaran ; Scott P. Chapman ; Joseph T. Evans and Lane W. Martin
- 刊名：Advanced Materials
- 出版年：2016
- 出版时间：December 28, 2016
- 年：2016
- 卷：28
- 期：48
- 页码：10750-10756
- 全文大小：2450K
- ISSN：1521-4095
文摘
A novel approach to on-demand improvement of electronic properties in complex-oxide ferroelectrics is demonstrated whereby ion bombardment – commonly used in classic semiconductor materials – is applied to the PbTiO3 system. The result is deterministic reduction in leakage currents by 5 orders of magnitude, improved ferroelectric switching, and unprecedented insights into the nature of defects and intergap state evolution in these materials.