Two carrier localizations in GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence

详细信息    查看全文

• 作者：Feng Wu ; Yang Li ; Wu Tian ; Jun Zhang ; Shuai Wang ; Jiangnan Dai ; Zhe Chuan Feng and Changqing Chen
• 刊名：physica status solidi (c)
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：13
• 期：5-6
• 页码：239-241
• 全文大小：588K
• ISSN：1610-1642a

文摘

Carrier localization effect has been observed in GaN/AlGaN multiquantum wells (MQWs) by analyzing the temperature dependent photoluminescence (PL) results. Specifically, two neighbouring peaks can be seen in the PL spectra with an abnormal variation when increasing the temperature. A conduction band model with two minimal potentials corresponding to two carrier localizations is proposed to explain the PL spectra. (