P-12: 3-D TCAD Simulation for Describing Intrinsic Fluctuations in Polycrystalline Silicon Thin Film Transistors

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• 作者：Seunghyun Jang ; ByoungTaek Son ; Sung-Hwan Choi ; Dongjo Kim ; Gunshik Kim and Moon-Hyun Yoo
• 刊名：SID Symposium Digest of Technical Papers
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：47
• 期：1
• 页码：1162-1164
• 全文大小：1733K
• ISSN：2168-0159

文摘

In this work, we investigate the influence of grain boundaries on the performance of polycrystalline silicon thin-film transistors (poly-Si TFTs) for high resolution active-matrix organic light-emitting diode (AMOLED) displays using Voronoi diagram. The novel 2-D Voronoi polycrystalline grain structure can show a more realistic electrical parameter variability when the channel dimension is scaled down for high-resolution display. Using a proposed method, the impact of polycrystalline granular structure controlled by crystallization process is identified. Further, we predict the effect of grain boundary-induced variations under different laser annealing process, such as Excimer Laser Annealing (ELA).