Metal-organic vapor phase epitaxy of GaPN alloys via surface nitridation using ammonia

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• 作者：Keisuke Yamane ; Masashi Moriyama ; Kerlee Boualiong ; Hiroto Sekiguchi ; Hiroshi Okada and Akihiro Wakahara
• 刊名：physica status solidi (b)
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：254
• 期：2
• 全文大小：969K
• ISSN：1521-3951

文摘

The present work is intended to pilot the possible use of ammonia precursors for the growth of III–V–N alloys with metal-organic vapor phase epitaxy (MOVPE) as opposed to typical growth procedures using dimethylhydrazine. The GaPN alloys are grown by repeated cycles of surface nitridation and growth of a thin GaP layer with an interval separating the nitridation and growth. The effects of conditions and duration of each step on the N composition and crystallinity are systematically clarified. An N composition is controlled up to 1.6% in the current conditions, maintaining a high crystalline quality comparable to the GaP substrates, while a continuous-supply method yields a much lower value.