Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2

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• 作者：Johannes Kern ; Iris Niehues ; Philipp Tonndorf ; Robert Schmidt ; Daniel Wigger ; Robert Schneider ; Torsten Stiehm ; Steffen Michaelis de Vasconcellos ; Doris E. Reiter ; Tilmann Kuhn and Rudolf Bratschitsch
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：September 7, 2016
• 年：2016
• 卷：28
• 期：33
• 页码：7101-7105
• 全文大小：1387K
• ISSN：1521-4095

文摘

Single-photon emitters in monolayer WSe₂ are created at the nanoscale gap between two single-crystalline gold nanorods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential well inside the gap. Single-photon emitters are localized there with a precision better than 140 nm.