Controllable Formation of the Crystalline Phases in Ge-Ga-S Chalcogenide Glass-Ceramics

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• 作者：Xinyu Yang ; Mingjie Zhang ; Kunlun Yan ; Liyuan Han ; Qin Xu ; Haitao Liu and Rongping Wang
• 刊名：Journal of the American Ceramic Society
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：100
• 期：1
• 页码：74-80
• 全文大小：1180K
• ISSN：1551-2916

文摘

We prepared chemically stoichiometric, S-poor and S-rich Ge–Ga–S glasses and annealed them at a temperature that was 20°C higher than its respective glass transition temperature. We aimed at tuning the formation of the different crystals in chalcogenide glass-ceramics. Through systematic characterization of the structure using X-ray diffraction and Raman scattering spectra, we found that, GeS₂ and GeS crystals only can be created in S-rich and S-poor glass-ceramics, respectively, while all GeS, Ga₂S₃, and GeS₂ crystals exist in chemically stoichiometric glass-ceramics. Moreover, we demonstrated the homogeneous distribution of the crystals can be formed in the S-rich glass-ceramics from the surface to the interior via composition designing. The present approach blazes a new path to control the growth of the different crystals in chalcogenide glass-ceramics.