Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices

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• 作者：Anqi Chen ; Hai Zhu ; Yanyan Wu ; Mingming Chen ; Yuan Zhu ; Xuchun Gui and Zikang Tang
• 刊名：Advanced Functional Materials
• 出版年：2016
• 出版时间：June 7, 2016
• 年：2016
• 卷：26
• 期：21
• 页码：3696-3702
• 全文大小：3027K
• ISSN：1616-3028

文摘

A key step in realization of a ZnO homojunction light-emitting diode is the effective p-type doping in ZnO:N. In this article, a feasible route is demonstrated to enhance hole doping in ZnO:N films by the assistance of Beryllium. The newly synthesized p-type ZnO is applied in light-emitting devices. The corresponding p–i–n junction exhibits excellent diode characteristics, and strong near band edge ultraviolet emissions is also observed even at temperatures as high as 400 K under the injection of continuous current. The results represent a critical advance toward the development of high-efficiency and stabilized p-type ZnO, which is also a desirable key step for future ZnO-based optoelectronic applications.