文摘
The synthesis of high-quality 2D MoTe<sub>2sub> with a desired phase on SiO<sub>2sub>/Si substrate is crucial to its diverse applications. A side reaction of Te with the substrate Si leading to SiTe and Si<sub>2sub>Te<sub>3sub> tends to happen during growth, resulting in the failure to obtain MoTe<sub>2sub>. It has been found that molecular sieves can adsorb the silicon telluride byproducts and eliminate the influence of the side reaction during the chemical vapor deposition synthesis of MoTe<sub>2sub>. With the help of molecular sieves, few-layer 1T′ MoTe<sub>2sub> can be grown from the MoO<sub>xsub> precursor. Pure 1T′ MoTe<sub>2sub> and 2H MoTe<sub>2sub> regions in centimeter-sized areas synthesized on the same piece of SiO<sub>2sub>/Si substrate can be obtained by using an overlapped geometry. The strategy provides a new method to controllably synthesize MoTe<sub>2sub> with desired phases and can be generalizable to the synthesis of other tellurium-based layered materials.