文摘
On page 7094, W. Hu and co-workers firstly demonstrate that the solid-electrolyte nature of AgTCNQ allows Ag ions to migrate under external induction to form nanoscale conducting filaments at the electrode/AgTCNQ interface, unveiling the switching riddle of AgTCNQ. An effective strategy is developed to locate the formation/disruption of conducting filaments using planar asymmetric configuration of Au/AgTCNQ/AlOx/Al. This novel single crystalline electrochemical metallization memory exhibits high On/Off ratio, excellent endurance, long retention time, self-compliant and self-rectifying behavior, as well as multilevel data storage capability.