High-Speed and Low-Energy Nitride Memristors
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- 作者：Byung Joon Choi ; Antonio C. Torrezan ; John Paul Strachan ; P. G. Kotula ; A. J. Lohn ; Matthew J. Marinella ; Zhiyong Li ; R. Stanley Williams and J. Joshua Yang
- 刊名：Advanced Functional Materials
- 出版年：2016
- 出版时间：August 2, 2016
- 年：2016
- 卷：26
- 期：29
- 页码：5290-5296
- 全文大小：1698K
- ISSN：1616-3028
文摘
High-performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al-rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.