Efficiency droop suppression of InGaN-based blue light-emitting diodes using dip-shaped quantum wells

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• 作者：Huimin Lu ; Tongjun Yu ; Yuebin Tao ; Xingbin Li ; Zhizhong Chen ; Zhijian Yang ; Jianping Wang and Guoyi Zhang
• 刊名：physica status solidi (a)
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：213
• 期：5
• 页码：1187-1192
• 全文大小：1073K
• ISSN：1862-6319

文摘

The InGaN-based blue light-emitting diodes (LEDs) with dip-shaped quantum wells (QWs) and conventional QWs were fabricated by MOVPE. The performances of fabricated InGaN-based LEDs were investigated experimentally and analyzed theoretically. The results reveal that the efficiency droop of InGaN-based LED is suppressed by using dip-shaped QWs structure. Firstly, the dip-shaped QWs LED has higher emission intensity compared with the conventional QWs LED due to the stronger quantum confinement and weaker polarization effect. Furthermore, the effective combination region in dip-shaped QWs does not reduce obviously which decrease will lead to efficiency droop aggravation. As a result, the efficiency droop at 50 A cm⁻² injection current for dip-shaped QWs LED reduce from 59% for conventional QWs LED to 48%. So, the dip-shaped QWs can be used to suppress the efficiency droop of InGaN-based LEDs.