Laser Desorption Ionization Time-of-Flight Mass Spectrometry of Glasses and Amorphous Films from Ge-As-Se System

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• 作者：Katar&iacute ; na Šú ; torová ; Lubom&iacute ; r Prokeš ; Virginie Nazabal ; Emeline Baudet ; Josef Havel and Petr Němec
• 刊名：Journal of the American Ceramic Society
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：99
• 期：11
• 页码：3594-3599
• 全文大小：363K
• ISSN：1551-2916

文摘

Laser Desorption Ionization Time-of-Flight Mass Spectrometry was exploited for the characterization of Ge–As–Se chalcogenide glasses and corresponding thin films fabricated using pulsed laser deposition. Main achievement of the paper is the determination of laser generated clusters’ stoichiometry. The clusters observed were As_b⁺ (b = 1–3), Se₂⁻, binary As_bSe⁺ (b = 1–3), As_bSe_c⁻ (b = 1–3, c = 1–4), Ge₂Se_c⁻ (c = 2–3), As₃Se₂⁺, Ge₂As_b⁻ (b = 2–3), Ge₃As_b⁻ (b = 1–2), Ge₃Se₄⁻, As₅Se_c⁻ (c = 4–5), GeAsSe₄⁻, Ge_aAsSe₅⁻ (a = 1–4), GeAs₂Se₃⁻, GeAs₃Se₂⁻, Ge₂As₂Se₂⁻, Ge₂AsSe_c⁻ (c = 6–7), and GeAs₃Se_c⁻ (c = 5–6) (in positive as well as in negative ion mode). The stoichiometries of identified species are compared with the structural units of the glasses/thin films revealed via Raman scattering spectra analysis. Some species are suggested to be fragments of bulk glass as well as thin films. Described method is useful also for the evaluation of the contamination of chalcogenide glasses or their thin films.