An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

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• 作者：Jong Su Kim ; Beom Joon Kim ; Young Jin Choi ; Moo Hyung Lee ; Moon Sung Kang and Jeong Ho Cho
• 刊名：Advanced Materials
• 出版年：2016
• 出版时间：June 22, 2016
• 年：2016
• 卷：28
• 期：24
• 页码：4803-4810
• 全文大小：1911K
• ISSN：1521-4095

文摘

High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene.