Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls
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- 作者：Linze Li ; Jason Britson ; Jacob R. Jokisaari ; Yi Zhang ; Carolina Adamo ; Alexander Melville ; Darrell G. Schlom ; Long-Qing Chen and Xiaoqing Pan
- 刊名：Advanced Materials
- 出版年：2016
- 出版时间：August 17, 2016
- 年：2016
- 卷：28
- 期：31
- 页码：6574-6580
- 全文大小：1541K
- ISSN：1521-4095
文摘
Controlled switching of resistivity in ferroelectric thin films is demonstrated by writing and erasing stable, nanoscale, strongly charged domain walls using an in situ transmission electron microscopy technique. The resistance can be read nondestructively and presents the largest off/on ratio (≈105) ever reported in room-temperature ferroelectric devices, opening new avenues for engineering ferroelectric thin-film devices.