Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure

详细信息    查看全文

• 作者：Aliaksei G. Vainilovich ; Evgenii V. Lutsenko ; Viacheslav N. Pavlovskii ; Gennadii P. Yablonskii ; Ahmed Alyamani ; Maher Aljohani ; Abdulaziz Aljariwi ; Sergey V. Gronin ; Sergey V. Sorokin ; Irina V. Sedova and Sergey V. Ivanov
• 刊名：physica status solidi (b)
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：253
• 期：8
• 页码：1498-1502
• 全文大小：547K
• ISSN：1521-3951

文摘

A high-efficiency microchip violet–green laser converter based on a molecular-beam epitaxy grown green-emitting (Zn)CdSe quantum dot (QD) II–VI laser heterostructure, optically pumped by emission of a cheap violet InGaN laser diode (LD) was demonstrated. The active region of the II–VI laser heterostructure consisted of three electronically coupled (Zn)CdSe QD sheets in a single ZnSe quantum well (QW) placed asymmetrically inside a graded-index ZnMgSSe/ZnSe superlattice optical waveguide. The cavity length of the cleaved-facet II–VI laser was 130 μm which is a nearly optimal value for minimizing the excitation power. InGaN LD radiation was focused into a narrow stripe on the surface of the II–VI laser by a microlens optical system. The converter showed laser emission at 541 nm with threshold excitation power of ∼0.5 W. The maximal output pulse power and conversion efficiency of 1.5 W and ∼15%, respectively, were achieved. The device was mounted in a standard TO-18 LD package.