Letter: Solution-processed flexible zinc-tin oxide thin-film transistors on ultra-thin polyimide substrates
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- 作者：Peixiong Gao ; Linfeng Lan ; Peng Xiao ; Zhenguo Lin ; Sheng Sun ; Yuzhi Li ; Wei Song ; Erlong Song ; Peng Zhang ; Dongxiang Luo ; Miao Xu and Junbiao Peng
- 刊名：Journal of the Society for Information Display
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：24
- 期：4
- 页码：211-215
- 全文大小：958K
- ISSN：1938-3657
文摘
In this letter, solution-processed flexible zinc-tin oxide (Z0.35T0.65O1.7) thin-film transistors with electrochemically oxidized gate insulators (AlOx:Nd) fabricated on ultra-thin (30 µm) polyimide substrates are presented. The AlOx:Nd insulators exhibited wonderful stability under bending and excellent insulating properties with low leakage current, high dielectric constant, and high breakdown field. The device exhibited a mobility of 3.9 cm2/V · s after annealing at 300 °C. In addition, the flexible device was able to maintain the electricity performance under various degrees of bending, which was attributed to the ultra-thin polyimide substrate.