Threshold voltage engineering in GaN-based HEMT by using La2O3 gate dielectric

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• 作者：Minhan Mi ; Yunlong He ; Bin Hou ; Meng Zhang ; Jincheng Zhang ; Chong Wang ; Xiaohua Ma and Yue Hao
• 刊名：physica status solidi (c)
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：13
• 期：5-6
• 页码：325-327
• 全文大小：298K
• ISSN：1610-1642a

文摘

In this paper, we presented AlGaN/GaN MIS-HEMT with a 6-nm ALD La₂O₃ as gate insulator. The gate leakage current had been greatly reduced at both positive and negative bias by using La₂O₃ gate dielectric. Threshold voltage for MIS-HEMT moved +1 V toward positive direction compared with the Schottky gate HEMT (HEMT) demonstrating the negatively fixed charges at La₂O₃/AlGaN interface. Besides, the transconductance of MIS-HEMT was not degraded. The stability of fixed and trap state introduced by La₂O₃ gate dielectric was discussed. (