In situ sulfurization to generate Sb<sub>2sub>(Se<sub>1 − xsub>S<sub>xsub>)<sub>3sub> alloyed films and their application for photovoltaics
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文摘
Because of its tunable band gap and band position, Sb<sub>2sub>(Se<sub>1 − xsub>S<sub>xsub>)<sub>3sub> (0 ≤ x ≤ 1) is a promising light-absorbing material for photovoltaic device applications. However, no systematic study on the synthesis and characterization of single-phase polycrystalline Sb<sub>2sub>(Se<sub>1 − xsub>S<sub>xsub>)<sub>3sub> thin films has been reported. Through introducing in situ sulfurization into the rapid thermal evaporation process, a series of single-phase, highly crystalline Sb<sub>2sub>(Se<sub>1 − xsub>S<sub>xsub>)<sub>3sub> films with x = 0.09, 0.20, 0.31, and 0.43 were successfully obtained, with the corresponding band gap, band position and film morphology fully revealed. Futhermore, solar cells with superstrate ITO/CdS/Sb<sub>2sub>(Se<sub>1 − xsub>S<sub>xsub>)<sub>3sub>/Au structure were fabricated and carefully optimized. Finally, a champion device having 5.79% solar conversion efficiency was obtained employing uniform Sb<sub>2sub>(Se<sub>0.80sub>S<sub>0.20sub>)<sub>3sub> absorber layer. Our experimental investigation confirmed that Sb<sub>2sub>(Se<sub>1 − xsub>S<sub>xsub>)<sub>3sub> is indeed a very promising absorber material worth further optimization. Copyright

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