Reduction of low-frequency noise in multilayer MoS2 FETs using a Fermi-level depinning layer

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• 作者：Yonghun Kim ; Woojin Park ; Jin Ho Yang ; Chunhum Cho ; Sang Kyung Lee and Byoung Hun Lee
• 刊名：physica status solidi (RRL) - Rapid Research Letters
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：10
• 期：8
• 页码：634-638
• 全文大小：445K
• ISSN：1862-6270

文摘

Two-dimensional transition metal dichalcogenides (TMDCs) are potential candidate materials for future thin-film field effect transistors (FETs). However, many aspects of this device must be optimized for practical applications. In addition, low-frequency noise that limits the design window of electronic devices, in general, must be minimized for TMD-based FETs. In this study, the low-frequency noise characteristics of multilayer molybdenum disulphide (MoS₂) FETs were investigated in detail, with two different contact structures: titanium (Ti) metal–MoS₂ channel and Ti metal–TiO₂ interlayer–MoS₂ channel. The results showed that the noise level of the device with a TiO₂ interlayer reduced by one order of magnitude compared with the device without the TiO₂ interlayer. This substantial improvement in the noise characteristics could be explained using the carrier number of fluctuation model. (