Thick target yields of proton induced gamma-ray emission from Al, Si and P
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文摘
Thick target excitation yield curves of gamma-rays from the reactions 27Al(p,p′γ)27Al (Eγ = 844 and 1014 keV), 27Al(p,αγ)27Al (Eγ = 1369 keV), 28Si(p,p′γ)28Si (Eγ = 1779 keV), 29Si(p,p′γ)29Si (Eγ = 1273 keV) and 31P(p,p′γ)31P (Eγ = 1266 keV) were measured by bombarding pure-element targets with protons at energies below 3 MeV. Gamma-rays were detected with a High Purity Ge detector placed at an angle of 90° with respect to the beam direction. The obtained thick target gamma-ray yields were compared with the previously published data. The overall systematic uncertainty of the thick target yield values was estimated to be better than ±9%.

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