- 作者：P.I. Kuznetsov<sup> ; sup><sup>pik218@ire216.msk.su" class="auth_mail" title="E-mail the corresponding authorsup> ; G.G. Yakushcheva ; B.S. Shchamkhalova ; V.A. Luzanov ; A.G. Temiryazev ; V.A. Jitov
- 关键词：A1 Atomic force microscopy ; A1 Solid solutions ; A1 X-ray diffraction ; A3 Metalorganic vapor phase epitaxy ; B1 Bismuth compounds ; B2 Topological insulators
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 January 2016
- 年：2016
- 卷：433
- 期：Complete
- 页码：114-121
- 全文大小：1700 K
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Epitaxial <span id="mmlsi0013" class="mathmlsrc"><span class="formulatext stixSupport mathImg" data-mathURL="/science?_ob=MathURL&_method=retrieve&_eid=1-s2.0-S0022024815006120&_mathId=si0013.gif&_user=111111111&_pii=S0022024815006120&_rdoc=1&_issn=00220248&md5=a7baa394836a51d03186ecebceb66fc0" title="Click to view the MathML source">(Bi<sub>2sub>Se<sub>3sub>)span><span class="mathContainer hidden"><span class="mathCode">span>span>span> films were grown on the sapphire substrate by MOVPE at 460 °C.
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Rhombohedral and orthorhombic films of <span id="mmlsi0008" class="mathmlsrc"><span class="formulatext stixSupport mathImg" data-mathURL="/science?_ob=MathURL&_method=retrieve&_eid=1-s2.0-S0022024815006120&_mathId=si0008.gif&_user=111111111&_pii=S0022024815006120&_rdoc=1&_issn=00220248&md5=9638f2a7ff1cc49a5a812c61bfb6f66c" title="Click to view the MathML source">(Bi<sub>1−xsub>Sb<sub>xsub>)<sub>2sub>Se<sub>3sub>span><span class="mathContainer hidden"><span class="mathCode">span>span>span> were deposited at 480 °C.
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Rhombohedral <span id="mmlsi0014" class="mathmlsrc"><span class="formulatext stixSupport mathImg" data-mathURL="/science?_ob=MathURL&_method=retrieve&_eid=1-s2.0-S0022024815006120&_mathId=si0014.gif&_user=111111111&_pii=S0022024815006120&_rdoc=1&_issn=00220248&md5=3a5dfa4c8e1e57679639ebc0a192e01b" title="Click to view the MathML source">(Bi<sub>4sub>Se<sub>3sub>)span><span class="mathContainer hidden"><span class="mathCode">span>span>span> and Bi phases were obtained at lower temperatures.
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Characterization of the films was carried out by Raman, XRD, AFM, SEM and EDS techniques.