Structural, magnetic and magnetotransport properties of bi-epitaxial La_0.7Sr_0.3MnO₃ (110) thin films integrated on Si (001)

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• 作者：Sandhyarani Punugupati ; ^{spunugu@ncsu.edu" class="auth_mail" title="E-mail the corresponding author} ; Raj Kumar ; Sudhakar Nori ; Frank Hunte ; Jagdish Narayan
• 关键词：La0.7Sr0.3MnO3 (110) ; Bi-epitaxial ; Magnetoresistance ; Out-of-plane
• 刊名：Acta Materialia
• 出版年：2016
• 出版时间：March 2016
• 年：2016
• 卷：106
• 期：Complete
• 页码：40-47
• 全文大小：1999 K

文摘

We report the growth of bi-epitaxial La_0.7Sr_0.3MnO₃ (110) thin films on Si (001) substrate with cubic yttria stabilized zirconia (c-YSZ)/SrTiO₃ (STO) buffer layers by pulsed laser deposition. The La_0.7Sr_0.3MnO₃ and STO thin films were grown with a single [110] out-of-plane orientation and with two in-plane domain variants, which is confirmed by XRD and detailed TEM studies. The growth of STO on c-YSZ can be explained by the paradigm of domain matching epitaxy. The epitaxial relationship between STO and c-YSZ can be written as [110] (001) c-YSZ ‖ [$\overline{1}1\overline{1}$] (110) STO (or) [110] (001) c-YSZ ‖ $\left[\overline{1}1\overline{2}\right]$ (110) STO. The La_0.7Sr_0.3MnO₃ thin films are ferromagnetic with Curie temperature 324 K and showed metal to insulator transition at 285 K. The La_0.7Sr_0.3MnO₃ thin films showed hysteresis loops in magnetoresistance when magnetic field is applied along both in-plane (110) and out-of-plane [110] directions. The highest magnetoresistance obtained in this study is −32% at 50 K and 50 kOe for in-plane configuration, whereas the room-temperature magnetoresistance is −4% at 10 kOe and −17% at 50 kOe. The hysteresis in the magnetoresistance and the controlled domain boundaries in bi-epitaxial La_0.7Sr_0.3MnO₃ films integrated on Si can offer significant advantages over the polycrystalline counterparts.