Effect of alternation of kinetic coefficients on step instabilities on Si(0 0 1) vicinal face

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• 作者：Masahide Sato ; Kaori Deura
• 关键词：A1. Computer simulation ; A1. Crystal morphology ; A1. Growth models ; A1. Morphological stability
• 刊名：Journal of Crystal Growth
• 出版年：2008
• 出版时间：April 2008
• 年：2008
• 卷：310
• 期：7-9
• 页码：1371-1375
• 全文大小：719 K

文摘

With taking account of alternation of kinetic coefficients, we study the possibility of step instabilities on a Si(0 0 1) vicinal face. In sublimation, a step with large kinetic coefficient recedes faster than that with small kinetic coefficient, and step pairs are formed. The upper side step in the step pair is the step with large kinetic coefficient. An equidistant array of the pairs is unstable against bunching. Number of steps 4436524e7"" title=""Click to view the MathML source"" alt=""Click to view the MathML source"">N_max in bunches increases with time as N_maxt^β. The exponent β=0.5 when the bunch grows via successive collisions of step pairs, and β≈1.2 when the bunch grows via coalescence of bunches.