Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well
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- 作者：I. Guizani ; C. Bilel ; M.M. Habchi ; A. Rebey ; ahmed.rebey@fsm.rnu.tn
- 关键词：GaAs/GaN.58yAs1-1.58yBiy/GaAs SQW ; Optical gain ; p-i-n type SQW ; BAC model ; Self-consistent calculation
- 刊名：Superlattices and Microstructures
- 出版年：2017
- 出版时间：February 2017
- 年：2017
- 卷：102
- 期：Complete
- 页码：141-146
- 全文大小：386 K
- 卷排序：102
文摘
n and p doping effects on the optical gain of GaNAsBi-based QW was studied. Material gain was enhanced in p-i-n type quantum structure. After doping, a blue-shift of the fundamental transition was observed. Well width dependence of optical gain was examined. Bi composition was optimized in order to obtain QWs operating at 1.55 μm.