Identification of divacancies in 4H-SiC

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• 作者：N.T. Son ; T. Umeda ; J. Isoya ; A. Gali ; M. Bockstedte ; B. Magnusson ; A. Ellison ; N. Morishita ; T. Ohshima ; H. Itoh and E. Janzé ; n
• 关键词：Divacancies ; Electron paramagnetic resonance ; Ab initio calculations
• 刊名：Physica B
• 出版年：2006
• 出版时间：1 April 2006
• 年：2006
• 卷：376-377
• 期：Complete
• 页码：334-337
• 全文大小：216 K

文摘

The P6/P7 centers in 4H-SiC were studied by electron paramagnetic resonance (EPR) and ab initio supercell calculations. The hyperfine coupling constants of C and Si neighbors obtained by EPR are in good agreement with the calculated values for the neutral divacancy, . Our results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy–carbon antisite pairs in the double positive charge state , are related to the triplet ground states of the 73481655c71cc99092d7"" title=""Click to view the MathML source"">C_3v/C_1h configurations of .