Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors

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• 作者：Rechem Djamil^a ; ^b ; ^{rechem_dj@yahoo.fr} ; Khial Aicha^a ; Abdelkader Souifi^c ; Djeffal Fayç ; al^d
• 关键词：Tin oxide ; Thin films ; Sol-gel method ; Annealing time ; UV photodetector
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：623
• 期：Complete
• 页码：1-7
• 全文大小：1335 K
• 卷排序：623

文摘

The constructed photodetector showed a low linear dark current 22.9 nA. High on/off current ratio for annealing time 120 min at a bias of 2 V Samples annealing for 30 min a high photocurrent was observed. Transient photoresponse of the fabricated device is reported under different annealing times.