Transition from positive to negative magnetoresistance induced by a constriction in semiconductor nanowire
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- 作者：M. Wołoszyn ; B.J. Spisak ; bjs@agh.edu.pl" class="auth_mail" title="E-mail the corresponding author ; P. Wó ; jcik ; J. Adamowski
- 关键词：Magnetoresistance ; Nanowires ; Spintronics
- 刊名：Physica E: Low-dimensional Systems and Nanostructures
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：83
- 期：Complete
- 页码：127-134
- 全文大小：999 K
文摘
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Magnetotransport in InSb nanowire with a constriction is calculated.
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Change of sign of magnetoresistance as a function of the constriction radius.
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Combined effect of the geometric constriction and the spin Zeeman splitting.
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Intentionally introduced constriction may serve as a spintronic device.