文摘
This paper presents a low voltage and high performance 1-bit full adder designed with an efficient internal logic structure that leads to have a reduced Power Delay Product (PDP). The modified NOR and NAND gates, an essential entity, are also presented. The circuit is designed with cadence virtuoso tool with UMC 90-nm and 55-nm CMOS technologies. The proposed adder is compared with some of the popular adders based on power consumption, speed and power delay product. The proposed full adder cells achieve 56% and 76.69% improvement in speed and power delay product metric when compared with conventional C-CMOS full adder. It is also found that the proposed adder cells exhibit excellent signal integrity and driving capability when operated at low voltages.