An efficient temperature dependent hot carrier injection reliability simulation flow
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- 作者：Mehdi Kamala ; mehdikamal@ut.ac.ir" class="auth_mail" title="E-mail the corresponding author ; Qing Xieb ; xqing@usc.edu" class="auth_mail" title="E-mail the corresponding author ; Massoud Pedramb ; pedram@usc.edu" class="auth_mail" title="E-mail the corresponding author ; Ali Afzali-Kushaa ; afzali@ut.ac.ir" class="auth_mail" title="E-mail the corresponding author ; Saeed Safaria ; saeed@ut.ac.ir" class="auth_mail" title="E-mail the corresponding author
- 关键词：HCI ; Reliability simulation ; Voltage threshold drift ; Mobility drift ; Delay degradation
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：57
- 期：Complete
- 页码：10-19
- 全文大小：1943 K
文摘
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Proposing an efficient temperature dependent hot carrier injection reliability simulation which is scalable.
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Proposing efficient techniques at different design levels to enable fast and high enough accurate full chip simulation.
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Suggesting to consider only the pertinent transitions which are the ones inducing the HCI impact.
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Proposing a method to classify the gates based on their impacts on the total accuracy of circuit-level HCI modeling.