Sulfurization of sputtered Ag-In precursors for AgInS2 solar cell absorber layers
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- 作者：M. Anantha Sunila ; Narayana Thotab ; K.G. Deepaa ; Nagaraju Jampanaa ; solarjnr@gmail.com" class="auth_mail" title="E-mail the corresponding author
- 关键词：AgInS2 (AIS) ; DC-sputtering ; Sulfurization ; P-type films ; Absorption coefficient
- 刊名：Thin Solid Films
- 出版年：2015
- 出版时间：30 November 2015
- 年：2015
- 卷：595
- 期：part_PA
- 页码：5-11
- 全文大小：1249 K
文摘
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AgInS2 films are grown by sulfurization of sputtered metal precursors.
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Effect of substrate temperature on the growth of AgInS2 films is studied.
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Films sulfurized at 500 °C have the best structural and opto-electrical properties.
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AgInS2/ZnS solar cell has been fabricated with an efficiency of ~ 0.3%.