Characteristics of ESD protection devices operated under elevated temperatures

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• 作者：Wei Liang^a ; ^{weiliang@knights.ucf.edu} ; Aihua Dong^a ; Hang Li^a ; Meng Miao^a ; Chung-Chen Kuo^b ; Maxim Klebanov^b ; Juin J. Liou^a
• 关键词：ESD ; Temperature ; TLP ; SCR ; Diode ; TCAD
• 刊名：Microelectronics Reliability
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：66
• 期：Complete
• 页码：46-51
• 全文大小：2103 K
• 卷排序：66

文摘

Characteristics of ESD devices under various temperatures are investigated. Some key ESD parameters under high temperatures are reported for the first time. TCAD simulation is carried out to offer physical insights.