Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450 °C
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- 作者：Jumpei Tajima ; Hisashi Murakami ; Yoshinao Kumagai ; Kazuya Takada ; Akinori Koukitu
- 关键词：A1. Stresses ; A3. Vapor-phase epitaxy ; B1. Nitrides ; B2. Semiconducting aluminum compounds
- 刊名：Journal of Crystal Growth
- 出版年：2009
- 出版时间：1 May 2009
- 年：2009
- 卷：311
- 期：10
- 页码：2837-2839
- 全文大小：317 K
文摘
A crack-free aluminum nitride (AlN) template layer was grown on a (0 0 0 1) sapphire substrate at 1450 °C using a thin (100 nm) protective AlN layer grown at 1065 °C by hydride vapor-phase epitaxy (HVPE). Full-width at half-maximum (FWHM) values of X-ray rocking curves (XRCs) for (0 0 0 2) and (1 0 1¯ 0) planes of the AlN layer were 378 and 580 arcsec, respectively. The formation of voids was observed at the interface between the thin protective AlN layer and the sapphire substrate due to decomposition reaction of sapphire during heating up to 1450 °C. The voids relaxed the tensile stress in the AlN layer, which resulted in the suppression of cracks.