Influence of substrate polarity of (0 0 0 1) and (0 0 0 )GaN surfaces on hydride vapor-phase epitaxy of InN

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• 作者：Rie Togashi ; Hisashi Murakami ; Yoshinao Kumagai ; Akinori Koukitu
• 关键词：A1. Characterization ; A3. Hydride vapor-phase epitaxy ; B1. Nitrides ; B2. Semiconducting indium compounds
• 刊名：Journal of Crystal Growth
• 出版年：2010
• 出版时间：15 February 2010
• 年：2010
• 卷：312
• 期：5
• 页码：651-655
• 全文大小：467 K

文摘

InN layers were grown on both-sides-polished (0 0 0 1) freestanding GaN substrates by hydride vapor-phase epitaxy (HVPE) in the growth temperature range from 450 to 650 °C with an input partial pressure of NH₃ ranging from 3.0×10⁻² to 3.8×10⁻¹ atm. An In-polar InN layer was grown on the (0 0 0 1) Ga-polar surface, while a N-polar InN layer was grown on the (0 0 0 ) N-polar surface of the freestanding GaN substrate. The InN layers of both polarities grown at 550 °C had smooth surfaces, ideal lattice constants of the wurtzite InN structure, and a minimum optical absorption edge energy of about 0.75 eV. Surface morphologies of the InN layers were also dependent on the NH₃ input partial pressure. The surface of In-polar InN became smoother under a high NH₃ input partial pressure, whereas the N-polar InN required a low NH₃ input partial pressure to achieve a smooth surface.